IXSH25N120A igbt equivalent, igbt.
* Second generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses
* MOS Gate turn-on - drive simplicity Applications
1.15/10 6 300
Symbo.
1.15/10 6 300
Symbol
Test Conditions
Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. 12.
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